Demonstration of innovative Germanium optoelectronic devices and developments of simulation technologies

We established essential technologies for realization of Ge optoelectronic devices on the Si platform, which are promising innovative devices with high performances and low power consumption toward next-generation LSI (Large Scale Integration), along with simulation technologies. We succeeded in formation of novel strained Ge channel structures and strained Ge-on-Insulator, room-temperature strong electroluminescence from photonic crystal and microdisk maicrocavities with Ge quantum dots and their coupling with optical waveguide.