Giga-second imaging leaded by pyrramid photoconductive layer

The inverted pyramid structure is an effective structure for transferring signal electrons from the photoelectric conversion unit to the processing circuit at the fastest speed, aiming at the realization of ultra high-speed imaging devices. In this study, typical silicon wet-etching techniques were applied to fabricate Ge-in-Si pyramid structures. Furthermore, we developed an efficient method to fabricate a Ge-in-Si pyramid structure by leaving an oxide film for insulation at the Si/Ge sidewall interface. Epitaxial growth of Ge was applied to the fabricated structure, and the structure of PD for high-speed imaging was realized.