Multi-stack interface dipole modulation memory and analog operation dynamics

We demonstrate for the first time the flash memory operation of the interface dipole modulation by using multi-stack HfO2/SiO2 structures. Good program/erase endurance over 100,000 cycles has been demonstrated, and analog current characteristics useful for neuromorphic applications have been observed. Experimental evidence for interfacial dipole modulation has been shown by hard x-ray photoelectron spectroscopy studies, and rearrangement of interfacial bonding by an electric field has been theoretically demonstrated to induce the potential change in the HfO2/SiO2 system.