Study of terminal structure and electronic band structure of diamond surface by angle-resolved photoelectron spectroscopy

Effects on the surface by etching process essential for diamond device fabrication (soft-ICP (ICP: Inductively Coupled Plasma) etching method which can be expected to reduce damage on the surface of diamond) and the change of valence band near the surface by boron and phosphorus doped at high concentration were investigated using a photoelectron spectrometer (AXIS Nova or ESCA - 300), and in some samples, using hard X - ray photoelectron spectroscopy (high intensity synchrotron radiation facility SPring - 8, BL47 XU). As a result, it was found that the soft-ICP etching method does not change the chemical bond state of the sample surface. The experimental results also suggested that the band near the diamond surface would bend due to high concentration doping.