固相源MBEによるGaAs(001)上に成長させたInGaP太陽電池の特性への基板ミスカットの効果

OSHIMA Ryuji; NAGATO Yuki; NAGATO Yuki; OKANO Yoshinobu; SUGAYA Takeyoshi; Yoshinobu OKANO

固相源MBEによるGaAs(001)上に成長させたInGaP太陽電池の特性への基板ミスカットの効果

Translated title of the contribution: Effects of substrate miscut on the properties of InGaP solar cells grown on GaAs(001) by solid-source molecular beam epitaxy

OSHIMA Ryuji, NAGATO Yuki, NAGATO Yuki, OKANO Yoshinobu, SUGAYA Takeyoshi, Yoshinobu OKANO

Department of Electrical,Electronic and Communication Engineering

Research output: Contribution to journal › Misc

Translated title of the contribution	Effects of substrate miscut on the properties of InGaP solar cells grown on GaAs(001) by solid-source molecular beam epitaxy
Original language	Japanese
Pages (from-to)	-
Journal	Japanese Journal of Applied Physics
Volume	56
Issue number	8S2
State	Published - 2017

Cite this

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title = "固相源MBEによるGaAs(001)上に成長させたInGaP太陽電池の特性への基板ミスカットの効果",

author = "\{OSHIMA Ryuji\} and \{NAGATO Yuki\} and \{NAGATO Yuki\} and \{OKANO Yoshinobu\} and \{SUGAYA Takeyoshi\} and Yoshinobu OKANO",

year = "2017",

language = "Japanese",

volume = "56",

pages = "--",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "IOP PUBLISHING LTD",

number = "8S2",

}

TY - JOUR

T1 - 固相源MBEによるGaAs(001)上に成長させたInGaP太陽電池の特性への基板ミスカットの効果

AU - OSHIMA Ryuji, null

AU - NAGATO Yuki, null

AU - OKANO Yoshinobu, null

AU - SUGAYA Takeyoshi, null

AU - OKANO, Yoshinobu

PY - 2017

Y1 - 2017

M3 - Misc

SN - 0021-4922

VL - 56

SP - -

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 8S2

ER -