歪みGe-on-Si(111)ダイオード構造からの室温EL発光

Translated title of the contribution: Room temperature EL from strained Ge-on-Si(111) diode structure

杉浦由和, 我妻勇哉, 山田航大, 星裕介, 山田道洋, 浜屋宏平, Kentarou SAWANO

Research output: Contribution to journalMisc

Translated title of the contributionRoom temperature EL from strained Ge-on-Si(111) diode structure
Original languageJapanese
Pages (from-to)-
Journal応用物理学会春季学術講演会講演予稿集(CD-ROM)
Volume68th
StatePublished - 2021

Cite this