角度分解硬X線光電子分光法によるHfO_2/Si/歪みGe/SiGe構造の評価

We have investigated the influence of Si-cap layer and the post deposition annealing (PDA) on compositional depth profiles and chemical structures of HfO_2/Si-cap/strained Ge/Si_<0.5>Ge_<0.5>/Si interfaces by angle-resolved X-ray photoelectron spectroscopy. Analyses of Ge 2p, Si 1s, Hf 3d and O 1s spectra show that strained-Ge layer was oxidized during the deposition of HfO_2 in the case of 1 nm in thickness of the Si-cap layer and that strained-Ge layer was not oxidized in the case of 3 nm and 5 nm in thickness of the Si-cap layer. A critical Si thickness also extracted.