Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La2O3/Si(100) interfacial transition layer

H Nohira; T Shiraishi; K Takahashi; T Hattori; Kashiwagi; I; C Ohshima; S Ohmi; H Iwai; S Joumori; K Nakajima; M Suzuki; K Kimura; Hiroshi NOHIRA

doi:10.1016/j.apsusc.2004.05.032

Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La2O3/Si(100) interfacial transition layer

H Nohira, T Shiraishi, K Takahashi, T Hattori, Kashiwagi, I, C Ohshima, S Ohmi, H Iwai, S Joumori, K Nakajima, M Suzuki, K Kimura, Hiroshi NOHIRA

Department of Electrical,Electronic and Communication Engineering

Research output: Contribution to journal › Article

Abstract

The composition and chemical structures of lanthanum oxide films were determined by combining angle-resolved photoelectron spectroscopy and high resolution Rutherford backscattering studies. Conduction and valence band discontinuity at La2O3/Si(1 0 0) interface was also determined by measuring the O 1s photoelectron energy loss and valence band spectra. (C) 2004 Elsevier B.V. All rights reserved.

Translated title of the contribution	Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La2O3/Si(100) interfacial transition layer
Original language	English
Pages (from-to)	493 - 496
Journal	Applied Surface Science
Volume	234
Issue number	1-4
DOIs	https://doi.org/10.1016/j.apsusc.2004.05.032
State	Published - Jul 2004

Access to Document

10.1016/j.apsusc.2004.05.032

Cite this

H Nohira, T Shiraishi, K Takahashi, T Hattori, Kashiwagi, I, C Ohshima, S Ohmi, H Iwai, S Joumori, K Nakajima, M Suzuki, K Kimura, & NOHIRA, H. (2004). Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La2O3/Si(100) interfacial transition layer. Applied Surface Science, 234(1-4), 493 - 496. https://doi.org/10.1016/j.apsusc.2004.05.032

@article{707a43cb8be24df5ab76627da6aad469,

title = "Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La2O3/Si(100) interfacial transition layer",

abstract = "The composition and chemical structures of lanthanum oxide films were determined by combining angle-resolved photoelectron spectroscopy and high resolution Rutherford backscattering studies. Conduction and valence band discontinuity at La2O3/Si(1 0 0) interface was also determined by measuring the O 1s photoelectron energy loss and valence band spectra. (C) 2004 Elsevier B.V. All rights reserved.",

author = "\{H Nohira\} and \{T Shiraishi\} and \{K Takahashi\} and \{T Hattori\} and Kashiwagi and I and \{C Ohshima\} and \{S Ohmi\} and \{H Iwai\} and \{S Joumori\} and \{K Nakajima\} and \{M Suzuki\} and \{K Kimura\} and Hiroshi NOHIRA",

year = "2004",

month = jul,

doi = "10.1016/j.apsusc.2004.05.032",

language = "英語",

volume = "234",

pages = "493 -- 496",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

number = "1-4",

}

H Nohira, T Shiraishi, K Takahashi, T Hattori, Kashiwagi, I, C Ohshima, S Ohmi, H Iwai, S Joumori, K Nakajima, M Suzuki, K Kimura, & NOHIRA, H 2004, 'Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La2O3/Si(100) interfacial transition layer', Applied Surface Science, vol. 234, no. 1-4, pp. 493 - 496. https://doi.org/10.1016/j.apsusc.2004.05.032

TY - JOUR

T1 - Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La2O3/Si(100) interfacial transition layer

AU - H Nohira, null

AU - T Shiraishi, null

AU - K Takahashi, null

AU - T Hattori, null

AU - Kashiwagi, null

AU - I, null

AU - C Ohshima, null

AU - S Ohmi, null

AU - H Iwai, null

AU - S Joumori, null

AU - K Nakajima, null

AU - M Suzuki, null

AU - K Kimura, null

AU - NOHIRA, Hiroshi

PY - 2004/7

Y1 - 2004/7

N2 - The composition and chemical structures of lanthanum oxide films were determined by combining angle-resolved photoelectron spectroscopy and high resolution Rutherford backscattering studies. Conduction and valence band discontinuity at La2O3/Si(1 0 0) interface was also determined by measuring the O 1s photoelectron energy loss and valence band spectra. (C) 2004 Elsevier B.V. All rights reserved.

AB - The composition and chemical structures of lanthanum oxide films were determined by combining angle-resolved photoelectron spectroscopy and high resolution Rutherford backscattering studies. Conduction and valence band discontinuity at La2O3/Si(1 0 0) interface was also determined by measuring the O 1s photoelectron energy loss and valence band spectra. (C) 2004 Elsevier B.V. All rights reserved.

U2 - 10.1016/j.apsusc.2004.05.032

DO - 10.1016/j.apsusc.2004.05.032

M3 - 記事

SN - 0169-4332

VL - 234

SP - 493

EP - 496

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-4

ER -

Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La2O3/Si(100) interfacial transition layer

Abstract

Access to Document

Fingerprint

Cite this