Dit-Distribution Difference Between Pre- and Post-FN Electron Injection into Thin Gate Oxide

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Translated title of the contribution	Dit-Distribution Difference Between Pre- and Post-FN Electron Injection into Thin Gate Oxide
Original language	American English
Pages (from-to)	II.7 - II.7
Journal	38th IEEE Semiconductor Interface Specialists Conference (SISC)
State	Published - Dec 1998

Cite this

@article{6a35b57ad19e472e891f78b8c9605bf7,

title = "Dit-Distribution Difference Between Pre- and Post-FN Electron Injection into Thin Gate Oxide",

author = "\{Y. Mitani\} and \{H. Satake\} and \{A. Toriumi\} and Yuichiro MITANI",

year = "1998",

month = dec,

language = "American English",

pages = "II.7 -- II.7",

journal = "38th IEEE Semiconductor Interface Specialists Conference (SISC)",

}

TY - JOUR

T1 - Dit-Distribution Difference Between Pre- and Post-FN Electron Injection into Thin Gate Oxide

AU - Y. Mitani, null

AU - H. Satake, null

AU - A. Toriumi, null

AU - MITANI, Yuichiro

PY - 1998/12

Y1 - 1998/12

M3 - Article

SP - II.7 - II.7

JO - 38th IEEE Semiconductor Interface Specialists Conference (SISC)

JF - 38th IEEE Semiconductor Interface Specialists Conference (SISC)

ER -