Electrical properties of a low-temperature fabricated Ge-based top-gate MOSFET structure with epitaxial ferromagnetic Heusler-alloy Schottky-tunnel source and drain

Keisuke Yamamoto; Takuro Matsuo; Michihiro Yamada; Youya Wagatsuma; Kentaro Sawano; Kohei Hamaya; Michihiro YAMADA

doi:10.1016/j.mssp.2023.107763

Electrical properties of a low-temperature fabricated Ge-based top-gate MOSFET structure with epitaxial ferromagnetic Heusler-alloy Schottky-tunnel source and drain

Keisuke Yamamoto, Takuro Matsuo, Michihiro Yamada, Youya Wagatsuma, Kentaro Sawano, Kohei Hamaya, Michihiro YAMADA

Department of Electrical,Electronic and Communication Engineering

Research output: Contribution to journal › Article › peer-review

Original language	Japanese
Pages (from-to)	107763 -
Journal	Materials Science in Semiconductor Processing
Volume	167
Issue number	15
DOIs	https://doi.org/10.1016/j.mssp.2023.107763
State	Published - Aug 2023

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10.1016/j.mssp.2023.107763

Cite this

Keisuke Yamamoto, Takuro Matsuo, Michihiro Yamada, Youya Wagatsuma, Kentaro Sawano, Kohei Hamaya, & YAMADA, M. (2023). Electrical properties of a low-temperature fabricated Ge-based top-gate MOSFET structure with epitaxial ferromagnetic Heusler-alloy Schottky-tunnel source and drain. Materials Science in Semiconductor Processing, 167(15), 107763 -. https://doi.org/10.1016/j.mssp.2023.107763

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title = "Electrical properties of a low-temperature fabricated Ge-based top-gate MOSFET structure with epitaxial ferromagnetic Heusler-alloy Schottky-tunnel source and drain",

author = "\{Keisuke Yamamoto\} and \{Takuro Matsuo\} and \{Michihiro Yamada\} and \{Youya Wagatsuma\} and \{Kentaro Sawano\} and \{Kohei Hamaya\} and Michihiro YAMADA",

year = "2023",

month = aug,

doi = "10.1016/j.mssp.2023.107763",

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volume = "167",

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Keisuke Yamamoto, Takuro Matsuo, Michihiro Yamada, Youya Wagatsuma, Kentaro Sawano, Kohei Hamaya, & YAMADA, M 2023, 'Electrical properties of a low-temperature fabricated Ge-based top-gate MOSFET structure with epitaxial ferromagnetic Heusler-alloy Schottky-tunnel source and drain', Materials Science in Semiconductor Processing, vol. 167, no. 15, pp. 107763 -. https://doi.org/10.1016/j.mssp.2023.107763

Electrical properties of a low-temperature fabricated Ge-based top-gate MOSFET structure with epitaxial ferromagnetic Heusler-alloy Schottky-tunnel source and drain. / Keisuke Yamamoto; Takuro Matsuo; Michihiro Yamada et al.
In: Materials Science in Semiconductor Processing, Vol. 167, No. 15, 08.2023, p. 107763 -.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Electrical properties of a low-temperature fabricated Ge-based top-gate MOSFET structure with epitaxial ferromagnetic Heusler-alloy Schottky-tunnel source and drain

AU - Keisuke Yamamoto, null

AU - Takuro Matsuo, null

AU - Michihiro Yamada, null

AU - Youya Wagatsuma, null

AU - Kentaro Sawano, null

AU - Kohei Hamaya, null

AU - YAMADA, Michihiro

PY - 2023/8

Y1 - 2023/8

U2 - 10.1016/j.mssp.2023.107763

DO - 10.1016/j.mssp.2023.107763

M3 - 記事

SN - 1369-8001

VL - 167

SP - 107763 -

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 15

ER -

Keisuke Yamamoto, Takuro Matsuo, Michihiro Yamada, Youya Wagatsuma, Kentaro Sawano, Kohei Hamaya et al. Electrical properties of a low-temperature fabricated Ge-based top-gate MOSFET structure with epitaxial ferromagnetic Heusler-alloy Schottky-tunnel source and drain. Materials Science in Semiconductor Processing. 2023 Aug;167(15):107763 -. doi: 10.1016/j.mssp.2023.107763