Abstract
Hard and soft X-ray photoelectron spectroscopy study on the composition and the chemical structures of transition layers at La2O3/Si(100), Gd2O3/Si(100), Lu2O3/Si(100) and La2O3/Y2O3/Si(100) interfaces and their thermal stabilities are discussed. Soft X-ray photoelectron spectroscopy study on the distribution of nitrogen atomos in nearly 1-nm-thick oxynitride films and the chemical structures of the transition layer at SiO2/Si(100) interface are also discussed.
| Translated title of the contribution | Hard and soft X-ray excited photoelectron spectroscopy study on high-kappa gate insulators |
|---|---|
| Original language | American English |
| Pages (from-to) | 69 - + |
| Journal | 2006 INTERNATIONAL WORKSHOP ON NANO CMOS, PROCEEDINGS |
| State | Published - 2006 |