Influences of C7H8, Ar and H-2 additions on the formation of BCN : O,H films using trimethylborate and N-2 gases by bipolar-type plasma based ion implantation

The preparation of B-C-N films are attempted using trimethylborate (TMB: BO3(CH3)(3)) and N-2 gases by a bipolar-type plasma based ion implantation method, and the influences Of C7H8, Ar and H-2 additional gases on the possibility of film formation are examined. It is found that no film is obtained using only TMB or TMB and N-2 gases (TMB+N-2). In the case Of C7H8 addition to TMB+N-2 system, the films composed of B, C, N and O are deposited. However, the deposition rate is significantly decreased as compared with the deposition of diamond-like carbon films using only C7H8 gas under the same deposition condition. As for Ar addition to TMB+N2 system, it is possible to deposit the films. However, FT-IR results suggest that BOx:H films are formed. On the other hand, H-2 addition to TMB+N-2 system makes the deposition of BCN:O,H films achievable, although the deposition rate is relatively low. In Current experiments, O atoms still remain in the films even as a reduced gas of H2 uses. However, these results suggest that the film deposition using TMB+N-2 system is strongly affected by the additional gases.