| Translated title of the contribution | Initial Stage of SiO2/Si Interface Formation on Hydrogen-Terminated Si(111)1×1 Surfaces |
|---|---|
| Original language | Japanese |
| Pages (from-to) | 165 - 166 |
| Journal | Default journal |
| Volume | F-6 |
| State | Published - 1995 |
Initial Stage of SiO2/Si Interface Formation on Hydrogen-Terminated Si(111)1×1 Surfaces
H. Nohira, E. Iijima, T. Aiba, T. Hattori, Hiroshi NOHIRA
Research output: Contribution to journal › Misc