“Ion dose and species dependence of strain relaxation of SiGe buffer layers formed by ion-implantation technique

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Translated title of the contribution	“Ion dose and species dependence of strain relaxation of SiGe buffer layers formed by ion-implantation technique
Original language	American English
State	Published - May 2009
Event	6th International Conference on Silicon Epitaxy and Heterostructures - Duration: 17 May 2009 → …

Conference	6th International Conference on Silicon Epitaxy and Heterostructures
Period	17/05/09 → …

Cite this

@conference{9079e7ae20c7497685c99dd281d44f7d,

title = "“Ion dose and species dependence of strain relaxation of SiGe buffer layers formed by ion-implantation technique",

author = "Y.Hoshi and K.Sawano and Y.Hiraoka and A.Yamada and K.Arimoto and N.Usami and K.Nakagawa and Y.Shiraki and Kentarou SAWANO",

year = "2009",

month = may,

language = "American English",

note = "6th International Conference on Silicon Epitaxy and Heterostructures ; Conference date: 17-05-2009",

}

TY - CONF

T1 - “Ion dose and species dependence of strain relaxation of SiGe buffer layers formed by ion-implantation technique

AU - Y.Hoshi, null

AU - K.Sawano, null

AU - Y.Hiraoka, null

AU - A.Yamada, null

AU - K.Arimoto, null

AU - N.Usami, null

AU - K.Nakagawa, null

AU - Y.Shiraki, null

AU - SAWANO, Kentarou

PY - 2009/5

Y1 - 2009/5

M3 - Presentation

T2 - 6th International Conference on Silicon Epitaxy and Heterostructures

Y2 - 17 May 2009

ER -