Microstructure difference of Ni induced poly-crystallized SiGe by changing annealing atmosphere, and enhancement of Ni induced poly-crystallization of Si by Ar ion-implantation

J. Yamanaka; T. Horie; M. Mitsui; K. Arimoto; K. Nakagawa; T. Sato; K. Sawano; Y. Shiraki; T. Moritani; M. Doi; Kentarou SAWANO

Microstructure difference of Ni induced poly-crystallized SiGe by changing annealing atmosphere, and enhancement of Ni induced poly-crystallization of Si by Ar ion-implantation

J. Yamanaka, T. Horie, M. Mitsui, K. Arimoto, K. Nakagawa, T. Sato, K. Sawano, Y. Shiraki, T. Moritani, M. Doi, Kentarou SAWANO

Department of Electrical,Electronic and Communication Engineering

Research output: Contribution to conference › Presentation

Translated title of the contribution	Microstructure difference of Ni induced poly-crystallized SiGe by changing annealing atmosphere, and enhancement of Ni induced poly-crystallization of Si by Ar ion-implantation
Original language	American English
State	Published - May 2007
Event	5th International Conference on Silicon Epitaxy and Heterostructures (ICSi-5) - Duration: 20 May 2007 → …

Conference

Conference	5th International Conference on Silicon Epitaxy and Heterostructures (ICSi-5)
Period	20/05/07 → …

Cite this

J. Yamanaka, T. Horie, M. Mitsui, K. Arimoto, K. Nakagawa, T. Sato, K. Sawano, Y. Shiraki, T. Moritani, M. Doi, & SAWANO, K. (2007). Microstructure difference of Ni induced poly-crystallized SiGe by changing annealing atmosphere, and enhancement of Ni induced poly-crystallization of Si by Ar ion-implantation. 5th International Conference on Silicon Epitaxy and Heterostructures (ICSi-5).

@conference{d19af1b61f6d4d59abe0ab8b91e327b8,

title = "Microstructure difference of Ni induced poly-crystallized SiGe by changing annealing atmosphere, and enhancement of Ni induced poly-crystallization of Si by Ar ion-implantation",

author = "\{J. Yamanaka\} and \{T. Horie\} and \{M. Mitsui\} and \{K. Arimoto\} and \{K. Nakagawa\} and \{T. Sato\} and \{K. Sawano\} and \{Y. Shiraki\} and \{T. Moritani\} and \{M. Doi\} and Kentarou SAWANO",

year = "2007",

month = may,

language = "American English",

note = "5th International Conference on Silicon Epitaxy and Heterostructures (ICSi-5) ; Conference date: 20-05-2007",

}

J. Yamanaka, T. Horie, M. Mitsui, K. Arimoto, K. Nakagawa, T. Sato, K. Sawano, Y. Shiraki, T. Moritani, M. Doi, & SAWANO, K 2007, 'Microstructure difference of Ni induced poly-crystallized SiGe by changing annealing atmosphere, and enhancement of Ni induced poly-crystallization of Si by Ar ion-implantation', 5th International Conference on Silicon Epitaxy and Heterostructures (ICSi-5), 20/05/07.

TY - CONF

T1 - Microstructure difference of Ni induced poly-crystallized SiGe by changing annealing atmosphere, and enhancement of Ni induced poly-crystallization of Si by Ar ion-implantation

AU - J. Yamanaka, null

AU - T. Horie, null

AU - M. Mitsui, null

AU - K. Arimoto, null

AU - K. Nakagawa, null

AU - T. Sato, null

AU - K. Sawano, null

AU - Y. Shiraki, null

AU - T. Moritani, null

AU - M. Doi, null

AU - SAWANO, Kentarou

PY - 2007/5

Y1 - 2007/5

M3 - Presentation

T2 - 5th International Conference on Silicon Epitaxy and Heterostructures (ICSi-5)

Y2 - 20 May 2007

ER -