Quality of SiO2 and of SiGe formed by oxidation of Si/Si0.7Ge0.3 heterostructure using atomic oxygen at 400 degrees C

H Nohira; T Kuroiwa; A Nakamura; Y Hirose; Y Hirose; J Mitsui; W Sakai; K Nakajima; M Suzuki; K Kimura; K Sawano; K Nakagawa; Y Shiraki; T Hattori; Hiroshi NOHIRA

doi:10.1016/j.apsusc.2004.06.042

Quality of SiO2 and of SiGe formed by oxidation of Si/Si0.7Ge0.3 heterostructure using atomic oxygen at 400 degrees C

H Nohira, T Kuroiwa, A Nakamura, Y Hirose, Y Hirose, J Mitsui, W Sakai, K Nakajima, M Suzuki, K Kimura, K Sawano, K Nakagawa, Y Shiraki, T Hattori, Hiroshi NOHIRA

Department of Electrical,Electronic and Communication Engineering

Research output: Contribution to journal › Article

Abstract

The oxidation of a 2.7-nm-thick layer of Si formed on a layer of Si0.7MGe0.3 using atomic oxygen at 400 degreesC was studied with the aid of angle-Tesolved X-ray photoelectron spectroscopy and high-resolution Rutherford backscattering spectroscopy. Analysis of the measurement results revealed that: (1) an appreciable number of Ge atoms diffused into the Si layer during the formation of a 3-nm-thick Si layer on the Si0.7Ge0.3 layer at 720 degreesC; (2) when the entire Si layer was oxidized, 1.8% of the Si layer remained in the SiO2 in the form of Si0.7Ge0.3 alloy; and (3) an abrupt compositional transition took place at the SiO2/SiGe interface. (C) 2004 Elsevier B.V. All rights reserved.

Translated title of the contribution	Quality of SiO2 and of SiGe formed by oxidation of Si/Si0.7Ge0.3 heterostructure using atomic oxygen at 400 degrees C
Original language	English
Pages (from-to)	134 - 138
Journal	Applied Surface Science
Volume	237
Issue number	1-4
DOIs	https://doi.org/10.1016/j.apsusc.2004.06.042
State	Published - Oct 2004

Access to Document

10.1016/j.apsusc.2004.06.042

Cite this

H Nohira, T Kuroiwa, A Nakamura, Y Hirose, Y Hirose, J Mitsui, W Sakai, K Nakajima, M Suzuki, K Kimura, K Sawano, K Nakagawa, Y Shiraki, T Hattori, & NOHIRA, H. (2004). Quality of SiO2 and of SiGe formed by oxidation of Si/Si0.7Ge0.3 heterostructure using atomic oxygen at 400 degrees C. Applied Surface Science, 237(1-4), 134 - 138. https://doi.org/10.1016/j.apsusc.2004.06.042

@article{5d5bff36ccb549e4ad7067b1bdfa4e29,

title = "Quality of SiO2 and of SiGe formed by oxidation of Si/Si0.7Ge0.3 heterostructure using atomic oxygen at 400 degrees C",

abstract = "The oxidation of a 2.7-nm-thick layer of Si formed on a layer of Si0.7MGe0.3 using atomic oxygen at 400 degreesC was studied with the aid of angle-Tesolved X-ray photoelectron spectroscopy and high-resolution Rutherford backscattering spectroscopy. Analysis of the measurement results revealed that: (1) an appreciable number of Ge atoms diffused into the Si layer during the formation of a 3-nm-thick Si layer on the Si0.7Ge0.3 layer at 720 degreesC; (2) when the entire Si layer was oxidized, 1.8\% of the Si layer remained in the SiO2 in the form of Si0.7Ge0.3 alloy; and (3) an abrupt compositional transition took place at the SiO2/SiGe interface. (C) 2004 Elsevier B.V. All rights reserved.",

author = "\{H Nohira\} and \{T Kuroiwa\} and \{A Nakamura\} and \{Y Hirose\} and \{Y Hirose\} and \{J Mitsui\} and \{W Sakai\} and \{K Nakajima\} and \{M Suzuki\} and \{K Kimura\} and \{K Sawano\} and \{K Nakagawa\} and \{Y Shiraki\} and \{T Hattori\} and Hiroshi NOHIRA",

year = "2004",

month = oct,

doi = "10.1016/j.apsusc.2004.06.042",

language = "英語",

volume = "237",

pages = "134 -- 138",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

number = "1-4",

}

H Nohira, T Kuroiwa, A Nakamura, Y Hirose, Y Hirose, J Mitsui, W Sakai, K Nakajima, M Suzuki, K Kimura, K Sawano, K Nakagawa, Y Shiraki, T Hattori, & NOHIRA, H 2004, 'Quality of SiO2 and of SiGe formed by oxidation of Si/Si0.7Ge0.3 heterostructure using atomic oxygen at 400 degrees C', Applied Surface Science, vol. 237, no. 1-4, pp. 134 - 138. https://doi.org/10.1016/j.apsusc.2004.06.042

TY - JOUR

T1 - Quality of SiO2 and of SiGe formed by oxidation of Si/Si0.7Ge0.3 heterostructure using atomic oxygen at 400 degrees C

AU - H Nohira, null

AU - T Kuroiwa, null

AU - A Nakamura, null

AU - Y Hirose, null

AU - J Mitsui, null

AU - W Sakai, null

AU - K Nakajima, null

AU - M Suzuki, null

AU - K Kimura, null

AU - K Sawano, null

AU - K Nakagawa, null

AU - Y Shiraki, null

AU - T Hattori, null

AU - NOHIRA, Hiroshi

PY - 2004/10

Y1 - 2004/10

N2 - The oxidation of a 2.7-nm-thick layer of Si formed on a layer of Si0.7MGe0.3 using atomic oxygen at 400 degreesC was studied with the aid of angle-Tesolved X-ray photoelectron spectroscopy and high-resolution Rutherford backscattering spectroscopy. Analysis of the measurement results revealed that: (1) an appreciable number of Ge atoms diffused into the Si layer during the formation of a 3-nm-thick Si layer on the Si0.7Ge0.3 layer at 720 degreesC; (2) when the entire Si layer was oxidized, 1.8% of the Si layer remained in the SiO2 in the form of Si0.7Ge0.3 alloy; and (3) an abrupt compositional transition took place at the SiO2/SiGe interface. (C) 2004 Elsevier B.V. All rights reserved.

AB - The oxidation of a 2.7-nm-thick layer of Si formed on a layer of Si0.7MGe0.3 using atomic oxygen at 400 degreesC was studied with the aid of angle-Tesolved X-ray photoelectron spectroscopy and high-resolution Rutherford backscattering spectroscopy. Analysis of the measurement results revealed that: (1) an appreciable number of Ge atoms diffused into the Si layer during the formation of a 3-nm-thick Si layer on the Si0.7Ge0.3 layer at 720 degreesC; (2) when the entire Si layer was oxidized, 1.8% of the Si layer remained in the SiO2 in the form of Si0.7Ge0.3 alloy; and (3) an abrupt compositional transition took place at the SiO2/SiGe interface. (C) 2004 Elsevier B.V. All rights reserved.

U2 - 10.1016/j.apsusc.2004.06.042

DO - 10.1016/j.apsusc.2004.06.042

M3 - 記事

SN - 0169-4332

VL - 237

SP - 134

EP - 138

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-4

ER -

Quality of SiO2 and of SiGe formed by oxidation of Si/Si0.7Ge0.3 heterostructure using atomic oxygen at 400 degrees C

Abstract

Access to Document

Fingerprint

Cite this