Abstract
Electromagnetic simulation of radiation efficiency for on-chip dipole, loop and patch antennas were performed. It was confirmed that the equivalent material property of a well layer can be expressed with uniform material with conductivity of 10^5S/m and thickness of 1μm. It was also found that high radiation efficiency can be obtained when the conductivity of a silicon substrate is smaller than 0.1S/m, or resistivity of 1kΩcm. The conductor loss is dominant in a patch antenna, and it can be neglected when the height between a patch and ground plane is larger than 100μm.
| Translated title of the contribution | Electromagnetic Simulation of Radiation Efficiency for On-Chip Dipole/Loop/Patch Antennas on a Si CMOS Substrate |
|---|---|
| Original language | Japanese |
| Pages (from-to) | 55 - 60 |
| Journal | IEICE technical report. Electromagnetic compatibility |
| Volume | 112 |
| Issue number | 256 |
| State | Published - 18 Oct 2012 |