Abstract
Silicon-fullerene compounds are produced in a modified fullerene generator, where a direct-current (DC) or a radiofrequency (RF) discharge is superimposed in the periphery region of an arc-discharge plasma. The soot mass analysis gives spectrum peaks corresponding to silicon-endohedral fullerenes Si@C-n, (n = 74, 86, etc.). The soot structure analyses with X-ray diffraction (XRD) and high-resolution electron microscopy (HREM) demonstrate that there exist nanoparticles with the fullerene size, which are considered to be Si@C-n, and carbon nanocapsules filled with SiC.
| Translated title of the contribution | Si-fullerene compounds produced by controlling spatial structure of an arc-discharge plasma |
|---|---|
| Original language | American English |
| Pages (from-to) | L1130 - L1132 |
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 39 |
| Issue number | 11B |
| DOIs | |
| State | Published - Nov 2000 |