抄録
Silicon-fullerene compounds are produced in a modified fullerene generator, where a direct-current (DC) or a radiofrequency (RF) discharge is superimposed in the periphery region of an arc-discharge plasma. The soot mass analysis gives spectrum peaks corresponding to silicon-endohedral fullerenes Si@C-n, (n = 74, 86, etc.). The soot structure analyses with X-ray diffraction (XRD) and high-resolution electron microscopy (HREM) demonstrate that there exist nanoparticles with the fullerene size, which are considered to be Si@C-n, and carbon nanocapsules filled with SiC.
| 寄稿の翻訳タイトル | Si-fullerene compounds produced by controlling spatial structure of an arc-discharge plasma |
|---|---|
| 本文言語 | アメリカ英語 |
| ページ(範囲) | L1130 - L1132 |
| ジャーナル | Japanese Journal of Applied Physics, Part 2: Letters |
| 巻 | 39 |
| 号 | 11B |
| DOI | |
| 出版ステータス | 出版済み - 11月 2000 |
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