Si-fullerene compounds produced by controlling spatial structure of an arc-discharge plasma

寄稿の翻訳タイトル: Si-fullerene compounds produced by controlling spatial structure of an arc-discharge plasma
  • T Hirata
  • , N Motegi
  • , R Hatakeyama
  • , T Oku
  • , T Mieno
  • , N Sato
  • , H Mase
  • , M Niwano
  • , N Miyamoto
  • , N Sato
  • , Takamichi HIRATA

研究成果: ジャーナルへの寄稿Misc

抄録

Silicon-fullerene compounds are produced in a modified fullerene generator, where a direct-current (DC) or a radiofrequency (RF) discharge is superimposed in the periphery region of an arc-discharge plasma. The soot mass analysis gives spectrum peaks corresponding to silicon-endohedral fullerenes Si@C-n, (n = 74, 86, etc.). The soot structure analyses with X-ray diffraction (XRD) and high-resolution electron microscopy (HREM) demonstrate that there exist nanoparticles with the fullerene size, which are considered to be Si@C-n, and carbon nanocapsules filled with SiC.
寄稿の翻訳タイトルSi-fullerene compounds produced by controlling spatial structure of an arc-discharge plasma
本文言語アメリカ英語
ページ(範囲)L1130 - L1132
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
39
11B
DOI
出版ステータス出版済み - 11月 2000

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